Tin antimony sulfide (TAS) thin films are deposited on a glass substrate using a two-source thermal evaporation method. The doping was done to investigate its results on the structural, electrical, and optical properties of tin-antimony sulfide thin films. XRD studies disclosed that annealed films exist in the Sn₂Sb₂S₅ phase. The accurate information about the composition and concentration depth of the as-deposited and annealed Sn₂Sb₂S₅thin-films was recorded by the Rutherford backscattering spectroscopy (RBS) technique. The photoconductivity response of these films was also excellent and enhanced with the increasing concentration of tin sulfide. The obtained bandgap was in the range of 1.68-2.31 eV. The thickness of the films was observed to be 240 nm to 336 nm, and the thin films possessed P-type conductivity. Electrical properties are significantly enhanced for the ternary compound Sn₂Sb₂S₅ as compared to Sb₂S₃. Results show that antimony tin sulfide has excellent potential in photovoltaic applications.